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The latest news and information on semiconductor lithography, including optical, EUV, e-beam, nanoimprint, maskless and other lithography techniques; exposure tools; resists; and masks/templates.

  • Double Patterning Battles Cost, Complexity
    Aaron Hand, Executive Editor, Electronic Media - 07/17/2008
     This year’s Sokudo Lithography Breakfast Forum focused on the challenges of double patterning. To be sure, double patterning is not without its challenges, but it nonetheless is positioned as the most promising technology for 32 nm patterning, and likely 22 nm as well. More

  • Self-Aligned Double Patterning Coming
    David Lammers, News Editor - 07/17/2008
     Applied Materials Inc. (Santa Clara, Calif.) announced several new tools at SEMICON West, and said that its self-aligned double patterning technology is gaining acceptance at key NAND flash manufacturers. More
  • Lithography Picture Looks Pretty Grim for 22 nm
    Aaron Hand, Executive Editor, Electronic Media - 07/16/2008
     The key questions posed at an afternoon session at SEMICON West were “Lithography for 22 nm: Will We Have a Viable Solution And Will We Be Able to Afford It?” The answer: Apparently not. Well, maybe. More
  • In Battle Against Haze, Rave Wields Rhazer
    David Lammers, News Editor - 07/15/2008
     Rave LLC has developed a prototype haze removal system, Rhazer, which can break down haze buildup on a reticle without removing the pellicle. “We are entering a whole new market space, and we have a working prototype,” said Rave marketing manager Michael Archuletta. More
  • ASML’s Latest Immersion Tool Enables 38 nm Memory
    Aaron Hand, Executive Editor, Electronic Media - 07/15/2008
     ASML’s Twinscan XT:1950i, introduced at SEMICON West, improves resolution ~5% over its predecessor, despite using a lens with the same 1.35 NA. More
  • ASML boosts immersion litho performance
    By Ann Steffora Mutschler, Senior Editor - 07/15/2008
     Aimed at 38-nm memory and 32-nm logic semiconductor high-volume manufacturing, Veldhoven, the Netherlands-based lithography giant ASML Holding NV today rolled out its Twinscan XT:1950i lithography system that uses a 1.35 numerical aperture lens, which the company claims increases the performance of its immersion chip lithography systems by 25% by improving overlay, resolution and throughput. More
  • Etcher Tuned for Double Patterning, Advanced Gates
    Laura Peters, Editor-in-Chief - 07/13/2008
     Lam introduced the Versys Kiyo3x Conductor etch platform, the capabilities of which can be applied as an upgrade to existing Versys Kiyo etchers, largely to address uniformity considerations of advanced gate and double patterning for 3X logic and flash chipmakers and 4X-5X DRAM makers. More
  • Cymer’s Year-End EUV Goal: A Full Shift
    David Lammers, News Editor - 07/09/2008
     Cymer seeks eight hours of continuous operation for its laser-produced plasma source for EUV lithography. The goal is to ensure a full shift of continuous source power operation by the end of this year at 100 W power levels, said David Brandt, Cymer’s senior director of EUV development and product management. More
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Aaron Hand
The Fine Print
Aaron Hand, Executive Editor, Semiconductor International
July 8, 2008
Zeiss and Schott Keep On Keeping On
Carl Zeiss SMT (Oberkochen, Germany) recently designated Schott Lithotec (Jen...
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Aaron Hand
The Fine Print
Aaron Hand, Executive Editor, Semiconductor International
July 1, 2008
Who's Minding the Litho Store in Albany?
Molecular Imprints Inc. (Austin, Texas) put out a press release today announcing the ...
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Aaron Hand
The Fine Print
Aaron Hand, Executive Editor, Semiconductor International
June 17, 2008
EUV Lithography Workshop: A Guest Perspective
In my June 11 Lithography Report, I asked readers for feedback on the International W...
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Aaron Hand
The Fine Print
Aaron Hand, Executive Editor, Semiconductor International
June 5, 2008
Maskless E-Beam: Worth Another Look?
It’s interesting to hear the same person who made such a push for immersion now...
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Vivek Bakshi, EUV Litho Inc.
Advocating More Open Communication on EUV Lithography

Vivek Bakshi, founder and president of EUV Litho Inc., explains why he started up the International Workshop on EUV Lithography, which took place in Maui in June. He also expands on recent developments in EUV, and why more research is needed.

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CMOS and Beyond: Surface Prep at Nanoscales
Now Playing: CMOS and Beyond: Surface Prep at Nanoscales
At SEMICON West 2006, Alex Braun interviews Ahmed Busnaina, director of the NSF Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing at Northeastern University. Busnaina gives his perspective on the longevity of CMOS, nanotechnology, and surface preparation at nanoscales.
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Technical Articles

    Competing Lithography Technologies Share Heartaches
Aaron Hand, Executive Editor, Electronic Media, 05/21/2008
 Rather than debate the pros and cons of the advanced lithography technologies that had been presented at Sematech’s Litho Forum, panelists last week focused on the difficult challenges that all of the technologies face, and how they can leverage learning from each. Preliminary results of the Litho Forum survey were presented that night, but full results will be webcast early next month....

    Etch's Role in Novel Logic Device Patterning
Thorsten Lill, Applied Materials, Santa Clara, Calif., www.appliedmaterials.com; Steffen Schulze, Mentor Graphics, Wilsonville, Ore., www.mentor.com, 04/01/2008
 The delay in the introduction of extreme ultraviolet (EUV) lithography has forced technologists to seek alternative patterning techniques using existing lithography tools for 32 and 22 nm devices. Splitting the tight pattern pitches, for example, of a line array into two separate masks with twice the regular space is one promising solution....

    Novel CD-SEM Overlay Method Improves Dual Trench Patterning CDU
Ilan Englard, Rich Piech, Liraz Gershtein, Ram Peltinov, Ofer Adan, Applied Materials Inc., Santa Clara, Calif., 02/01/2008
 Using a trench-within-a-trench overlay mark and automated process control strategy, the CD uniformity issue associated with dual trench patterning can be kept within a production-worthy range....

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EVENTS

SEMICON Taiwan
Sept. 9-11, 2008
Taipei World Trade Center
5th International Symposium on Immersion Lithography Extensions
Sept. 22-25, 2008
The Hague, The Netherlands
International Symposium on Extreme Ultraviolet Lithography
Sept. 28-Oct. 1, 2008
Lake Tahoe, Calif.

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